MPSH10
RF SMALL SIGNAL TRANSISTORManufacturer: Fairchild Semiconductor
Categories: Bipolar RF Transistors
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Fairchild Semiconductor MPSH10 NPN RF small signal transistor designed for high-frequency applications. This through-hole component offers a 25V collector-emitter breakdown voltage and a transition frequency of 650MHz, suitable for RF amplification and switching circuits. With a maximum power dissipation of 350mW and a minimum DC current gain (hFE) of 60 at 4mA and 10V, the MPSH10 provides reliable performance in demanding RF environments. Its operating temperature range of -65°C to 150°C makes it suitable for use across various industrial sectors, including telecommunications and consumer electronics. Offered in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Gain | - |
| Power - Max | 350mW |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
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