MR3A16AYS35
IC RAM 8MBIT PARALLEL 54TSOP2Manufacturer: Everspin Technologies Inc.
Categories: Memory
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Everspin Technologies Inc. MR3A16AYS35 is an 8Mbit Magnetoresistive RAM (MRAM) memory integrated circuit featuring a parallel interface. This non-volatile memory device offers a fast 35 ns access time and a word/page write cycle time of 35 ns, operating from a 3V to 3.6V supply. The memory is organized as 512K x 16 and housed in a 54-TSOP2 package designed for surface mounting. Qualified to AEC-Q100 standards and rated for automotive applications with an operating temperature range of 0°C to 70°C, this component is suitable for demanding environments. Its unique MRAM technology provides SRAM-like speed and endurance with non-volatility, making it ideal for data logging, industrial control, and automotive systems requiring instant data retention upon power loss.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 54-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | MRAM (Magnetoresistive RAM) |
| Memory Format | RAM |
| Supplier Device Package | 54-TSOP2 |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 35ns |
| Memory Interface | Parallel |
| Access Time | 35 ns |
| Memory Organization | 512K x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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