MR2A16AMYS35
IC RAM 4MBIT PARALLEL 44TSOP2Manufacturer: Everspin Technologies Inc.
Categories: Memory
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Everspin Technologies Inc. MR2A16AMYS35 is a 4Mbit non-volatile MRAM (Magnetoresistive RAM) memory device featuring a parallel interface. This component offers a fast access time of 35 ns, enabling rapid data retrieval. The memory organization is 256K x 16, and it operates within a voltage supply range of 3V to 3.6V. Designed for surface mount applications, it is housed in a 44-TSOP2 package. The MR2A16AMYS35 is qualified to AEC-Q100 standards and operates across an industrial temperature range of -40°C to 125°C, making it suitable for demanding automotive applications. Its inherent non-volatility and robust write performance, with a word/page write cycle time of 35ns, make it an ideal choice for data logging, industrial control, and automotive infotainment systems where data integrity is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | MRAM (Magnetoresistive RAM) |
| Memory Format | RAM |
| Supplier Device Package | 44-TSOP2 |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 35ns |
| Memory Interface | Parallel |
| Access Time | 35 ns |
| Memory Organization | 256K x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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