MR0A08BYS35
IC RAM 1MBIT PARALLEL 44TSOP2Manufacturer: Everspin Technologies Inc.
Categories: Memory
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Everspin Technologies Inc. MR0A08BYS35 is a 1Mbit Magnetoresistive RAM (MRAM) memory integrated circuit. This non-volatile RAM features a parallel interface with an access time of 35 ns and a write cycle time of 35 ns. The memory is organized as 128K x 8 bits and is housed in a 44-TSOP2 package, suitable for surface mounting. Operating within a supply voltage range of 3V to 3.6V, this component is designed for applications requiring high speed, non-volatility, and data retention without battery backup. It finds use in industrial control, automotive systems, and data logging applications where persistent memory is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 3V ~ 3.6V |
| Technology | MRAM (Magnetoresistive RAM) |
| Memory Format | RAM |
| Supplier Device Package | 44-TSOP2 |
| Write Cycle Time - Word, Page | 35ns |
| Memory Interface | Parallel |
| Access Time | 35 ns |
| Memory Organization | 128K x 8 |
| Programmable | Not Verified |
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