EM6HE08EW9G-10H
IC DRAM 4GBIT PAR 78FBGAManufacturer: Etron Technology, Inc.
Categories: Memory
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Etron Technology, Inc. presents the EM6HE08EW9G-10H, a 4Gbit DDR3L SDRAM memory component. This volatile memory device features a parallel interface and operates at a clock frequency of 933 MHz with an access time of 20 ns. The memory organization is 512M x 8, and it requires a supply voltage between 1.283V and 1.45V. The component is housed in a 78-FBGA package with dimensions of 7.5x10.6 mm, suitable for surface mount applications. Its write cycle time for word and page operations is 15 ns. This memory solution is utilized in applications requiring high-speed data buffering and storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 78-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Voltage - Supply | 1.283V ~ 1.45V |
| Technology | SDRAM - DDR3L |
| Clock Frequency | 933 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 78-FBGA (7.5x10.6) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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