EM6GE16EWXD-10H
IC DRAM 4GBIT PAR 96FBGAManufacturer: Etron Technology, Inc.
Categories: Memory
Quality Control: Learn More
Etron Technology, Inc. EM6GE16EWXD-10H is a 4Gbit SDRAM DDR3 memory device featuring a parallel interface. This component operates at a clock frequency of 933 MHz with an access time of 20 ns. The memory organization is 256M x 16, and it requires a supply voltage between 1.425V and 1.575V. The device is housed in a 96-FBGA (9x13) package and is surface-mount compatible, supplied on tape and reel. Applications for this volatile memory component include consumer electronics, automotive systems, and industrial automation. The write cycle time for word/page operations is 15 ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 96-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Voltage - Supply | 1.425V ~ 1.575V |
| Technology | SDRAM - DDR3 |
| Clock Frequency | 933 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 96-FBGA (9x13) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 256M x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
EM68C16CWQG-25H
IC DRAM 1GBIT PARALLEL 84FBGA
EM6HE16EWXD-10IH
IC DRAM 4GBIT PAR 96FBGA
EM6HE08EW3F-12H
IC DRAM 4GBIT PARALLEL 78FBGA
