EM6GE08EW9G-10H
IC DRAM 4GBIT PARALLEL 78FBGAManufacturer: Etron Technology, Inc.
Categories: Memory
Quality Control: Learn More
Etron Technology, Inc. EM6GE08EW9G-10H, a 4Gbit SDRAM DDR3 memory integrated circuit, operates at a clock frequency of 933 MHz with an access time of 20 ns. This volatile memory features a parallel interface and a memory organization of 512M x 8. The device is supplied in a 78-FBGA package with dimensions of 7.5x10.6, suitable for surface mounting. It functions within a voltage supply range of 1.425V to 1.575V and has a word/page write cycle time of 15ns. The operating temperature range is 0°C to 95°C (TC). This component is utilized in applications within the computing and consumer electronics industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 78-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Voltage - Supply | 1.425V ~ 1.575V |
| Technology | SDRAM - DDR3 |
| Clock Frequency | 933 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 78-FBGA (7.5x10.6) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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