EM6GE08EW8D-10H
IC DRAM 4GBIT PAR 78FBGAManufacturer: Etron Technology, Inc.
Categories: Memory
Quality Control: Learn More
Etron Technology, Inc. presents the EM6GE08EW8D-10H, a 4Gbit SDRAM DDR3 memory IC designed for demanding applications. This component features a parallel interface, operating at a clock frequency of 933 MHz with an access time of 20 ns. The memory organization is 512M x 8, utilizing a volatile DRAM technology. Packaged in a 78-FBGA (9x10.5) format for surface mounting, it operates within a voltage supply range of 1.425V to 1.575V and a case temperature range of 0°C to 95°C. The write cycle time for word/page operations is 15 ns. This memory solution is suitable for use in computing, consumer electronics, and industrial automation sectors. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 78-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Voltage - Supply | 1.425V ~ 1.575V |
| Technology | SDRAM - DDR3 |
| Clock Frequency | 933 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 78-FBGA (9x10.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 20 ns |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
EM6HD08EWUF-10H
IC DRAM 2GBIT PAR 78FBGA
EM63A165TS-5IG
IC DRAM 256MBIT PAR 54TSOP II
EM6HD08EWUF-10IH
IC DRAM 2GBIT PAR 78FBGA
