EM6AA160TSE-4G
IC DRAM 256MBIT PAR 66TSOP IIManufacturer: Etron Technology, Inc.
Categories: Memory
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Etron Technology, Inc. EM6AA160TSE-4G is a 256Mbit Synchronous Dynamic Random-Access Memory (SDRAM) component. This volatile memory features a parallel interface and operates at a clock frequency of 250 MHz with an access time of 700 ps. The memory organization is 16M x 16, delivering a 256Mbit density. It utilizes DDR technology and is supplied in a 66-TSOP II package for surface mounting. The operating voltage range is 2.3V to 2.7V, and the component operates within a temperature range of 0°C to 70°C. This device is suitable for applications in networking, consumer electronics, and industrial automation. The write cycle time for word/page operations is 15ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 66-TSSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 256Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.3V ~ 2.7V |
| Technology | SDRAM - DDR |
| Clock Frequency | 250 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 66-TSOP II |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | Parallel |
| Access Time | 700 ps |
| Memory Organization | 16M x 16 |
| Programmable | Not Verified |
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