EM6A9160TSC-4G
IC DRAM 128MBIT PAR 66TSOP IIManufacturer: Etron Technology, Inc.
Categories: Memory
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Etron Technology, Inc. EM6A9160TSC-4G is a 128Mbit SDRAM DDR memory component organized as 8M x 16. This volatile memory device operates with a clock frequency of 250 MHz and features an access time of 700 ps. The parallel memory interface, coupled with a write cycle time of 12ns, ensures efficient data handling. Supplied in a 66-TSOP II package, this surface mount component operates within a voltage range of 2.3V to 2.7V and a temperature range of 0°C to 70°C. Its capabilities make it suitable for applications in consumer electronics, industrial control systems, and networking equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 66-TSSOP (0.400"", 10.16mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 128Mbit |
| Memory Type | Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 2.3V ~ 2.7V |
| Technology | SDRAM - DDR |
| Clock Frequency | 250 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 66-TSOP II |
| Write Cycle Time - Word, Page | 12ns |
| Memory Interface | Parallel |
| Access Time | 700 ps |
| Memory Organization | 8M x 16 |
| Programmable | Not Verified |
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