EPC2302ENGRT
TRANS GAN 100V DIE .0018OHMManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC presents the eGaN® series EPC2302ENGRT, a high-performance N-Channel Gallium Nitride field-effect transistor. This device features a low on-resistance of 1.8 mOhm at 50A and 5V drive voltage, with a drain-to-source voltage (Vdss) of 100V. Designed for demanding applications, it offers a continuous drain current (Id) of 101A at 25°C (Ta) and a maximum gate charge (Qg) of 23 nC at 5V. The EPC2302ENGRT utilizes a 7-QFN (3x5) package for efficient thermal management and is supplied in a Tape & Reel (TR) configuration. Key parameters include a maximum gate-source voltage (Vgs) of +6V/-4V and a gate threshold voltage (Vgs(th)) of 2.5V at 14mA. This component is suitable for power conversion applications across various industries, including automotive, industrial, and data center power. Operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 7-PowerWQFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 101A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 50A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 14mA |
| Supplier Device Package | 7-QFN (3x5) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 50 V |
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