EPC2218
GANFET N-CH 100V DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
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EPC EPC2218 is a GaNFET N-Channel power transistor featuring a 100V drain-source breakdown voltage. This device offers an ultra-low on-resistance of 3.2mOhm at 25A, 5V Vgs. With a continuous drain current capability of 60A (Ta) and a maximum gate-source voltage of +6V/-4V, it is designed for high-efficiency power conversion applications. Key parameters include a gate charge of 16.3 nC @ 5V and input capacitance of 2703 pF @ 50V. The EPC EPC2218 is supplied as a die in Tape & Reel packaging, suitable for demanding operating temperatures from -40°C to 150°C (TJ). Its robust performance characteristics make it ideal for use in advanced power management solutions across various industries, including consumer electronics, automotive, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2703 pF @ 50 V |
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