EPC2212
GANFET N-CH 100V 18A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC eGaN® EPC2212 is an N-Channel GaNFET die featuring a 100 V drain-source voltage. This component offers a continuous drain current of 18 A at 25°C with a maximum on-resistance of 13.5 mOhm at 11 A and 5 V gate-source voltage. The EPC2212 exhibits a gate charge (Qg) of 4 nC at 5 V and an input capacitance (Ciss) of 407 pF at 50 V. It operates with a drive voltage range of 5 V and has a maximum gate-source voltage of +6 V and a minimum of -4 V. The EPC2212 is suitable for surface mount applications and operates within a temperature range of -40°C to 150°C (TJ). This GaNFET technology is widely adopted in power conversion applications, including DC-DC converters, motor drives, and Class D audio amplifiers. The component is supplied in Tape & Reel packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 11A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 407 pF @ 50 V |
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