EPC2202
GANFET N-CH 80V 18A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC eGaN® FET N-Channel GaNFET, part number EPC2202, offers an 80V drain-source voltage rating and a continuous drain current of 18A. This die-form component features a low on-resistance of 17mOhm at 11A and 5V gate drive. The EPC2202 exhibits a gate charge of 4nC at 5V and an input capacitance of 415pF at 50V. Designed for surface mount applications, it operates across a temperature range of -40°C to 150°C (TJ). This AEC-Q101 qualified component is suitable for automotive applications.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 11A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Supplier Device Package | Die |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +5.75V, -4V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 415 pF @ 50 V |
| Qualification | AEC-Q101 |
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