EPC2053
GANFET N-CH 100V 48A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC eGaN® EPC2053 is a 100 V N-Channel GaNFET designed for high-efficiency power conversion applications. This die-packaged component offers a continuous drain current of 48A at 25°C, with a low on-resistance of 3.8 mOhm at 25A and 5V gate drive. Key specifications include a gate charge of 14.8 nC at 5V and an input capacitance of 1895 pF at 50V. The EPC2053 operates across a temperature range of -40°C to 150°C. This device is suitable for demanding applications in sectors such as automotive, industrial power supplies, and data centers where high power density and efficiency are critical. The component is supplied in Tape & Reel packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1895 pF @ 50 V |
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