EPC2049ENGRT
GANFET N-CH 40V 16A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC's eGaN® series EPC2049ENGRT is a 40V N-Channel GaNFET operating as a die. This component offers a low on-resistance of 5 mOhm at 15A and 5V Vgs, with a continuous drain current of 16A at 25°C. Key parameters include a gate charge (Qg) of 7.6 nC at 5V and input capacitance (Ciss) of 805 pF at 20V. The device supports a maximum gate-source voltage of +6V and -4V, with a threshold voltage (Vgs(th)) of 2.5V at 6mA. It is suitable for surface mount applications with a specified operating temperature range of -40°C to 150°C (TJ). This GaNFET is commonly utilized in power conversion and management solutions across industries like automotive, industrial, and consumer electronics. The component is supplied in Tape & Reel packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 15A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 6mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 805 pF @ 20 V |
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