EPC2039
GANFET N-CH 80V 6.8A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC eGaN® EPC2039 is an 80V N-Channel GaNFET presented as a die. This device features a maximum continuous drain current of 6.8A (Ta) at 25°C and a low on-resistance of 25mOhm at 6A, 5V. It is designed with a gate drive voltage of 5V, a maximum gate charge of 2.4 nC at 5V, and an input capacitance of 210 pF at 40V. The EPC2039 operates across a temperature range of -40°C to 150°C (TJ) and supports gate voltages up to +6V and down to -4V, with a threshold voltage of 2.5V at 2mA. This component is commonly utilized in power conversion applications across industries such as automotive, consumer electronics, and industrial power supplies. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 2mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 40 V |
Request a Quote
Clients Also Buy
EPC2203
GANFET N-CH 80V 1.7A DIE
EPC2051
GANFET N-CH 100V 1.7A DIE
EPC2038
GANFET N-CH 100V 500MA DIE
