EPC2034C
GANFET N-CH 200V 48A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC's eGaN® series EPC2034C is a 200V N-Channel GaNFET presented as a die. This component offers a continuous drain current of 48A (Ta) at 25°C and boasts a low Rds On of 8 mOhm at 20A, 5V. Key characteristics include a gate charge (Qg) of 11 nC at 5V and input capacitance (Ciss) of 1140 pF at 100V. It operates with a gate-source voltage (Vgs) range of +6V to -4V and a threshold voltage (Vgs(th)) of 2.5V at 7mA. The device is designed for surface mount applications and operates across a temperature range of -40°C to 150°C (TJ). This component is typically found in power conversion applications across industries such as data centers, automotive, and industrial power supplies. The EPC2034C is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1140 pF @ 100 V |
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