EPC2034
GANFET N-CH 200V 48A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
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EPC's eGaN® series GaNFET, part number EPC2034, is a 200V N-channel enhancement-mode power transistor. This device features a low on-resistance of 10 mOhm at 20A and 5V Vgs, with a continuous drain current of 48A (Ta). The EPC2034 utilizes Gallium Nitride technology, offering advantages in high-frequency switching and power density. Key parameters include a gate charge (Qg) of 8.8 nC at 5V and input capacitance (Ciss) of 950 pF at 100V. Designed as a surface mount die, it operates across a wide temperature range of -40°C to 150°C (TJ). This component is suitable for applications in power conversion, motor drives, and DC-DC converters where high efficiency and performance are critical. The device is supplied in Tape & Reel packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |