EPC2033
GANFET N-CH 150V 48A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
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EPC's eGaN® EPC2033 is a highly efficient N-Channel GaNFET designed for demanding power conversion applications. This surface mount die offers a 150V drain-source voltage rating and a continuous drain current capability of 48A at 25°C. Key parameters include a low on-resistance of 7mOhm at 25A and 5V, and a gate charge of 10nC at 5V, contributing to superior switching performance. The input capacitance (Ciss) is 1140pF at 75V. This component is widely utilized in power supply units, DC-DC converters, and motor drives across automotive, industrial, and consumer electronics sectors. The EPC2033 is supplied in Tape & Reel packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Supplier Device Package | Die |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1140 pF @ 75 V |
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