EPC2031ENGRT
GANFET NCH 60V 31A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC eGaN® EPC2031ENGRT is a 60V N-Channel GaNFET die designed for high-performance power conversion applications. This component offers a low on-resistance of 2.6mOhm at 30A and 5V gate drive, enabling efficient operation with minimal conduction losses. With a continuous drain current rating of 31A (Ta) and a maximum gate-source voltage of +6V/-4V, it is suitable for demanding power management tasks. Key electrical characteristics include a gate charge (Qg) of 17 nC at 5V and an input capacitance (Ciss) of 1800 pF at 300V. Operating across a temperature range of -40°C to 150°C (TJ), this die is packaged on tape and reel for surface mount assembly. Its robust performance makes it ideal for use in advanced power supplies, DC-DC converters, and motor drives across various industries including computing, automotive, and industrial automation.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 30A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 15mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 300 V |
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