EPC2030ENGRT
GANFET NCH 40V 31A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
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The EPC eGaN® EPC2030ENGRT is a 40V N-Channel Gallium Nitride field-effect transistor designed for high-performance power conversion applications. Featuring an ultra-low on-resistance of 2.4mOhm at 30A and 5V Vgs, this die-level device offers exceptional efficiency. Its low gate charge of 18 nC at 5V and input capacitance of 1900 pF at 20V enable fast switching speeds, critical for advanced power management. The EPC EPC2030ENGRT supports a continuous drain current of 31A (Ta) and operates across a wide temperature range of -40°C to 150°C (TJ). This component is utilized in demanding sectors such as automotive, consumer electronics, and industrial automation where superior power density and efficiency are paramount. The device is supplied in a die package and available on Tape & Reel (TR).
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 30A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 16mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 20 V |
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