EPC2030
GANFET NCH 40V 31A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
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EPC's eGaN® series N-Channel GaNFET, part number EPC2030, is a 40V power transistor packaged as a die. This device offers a low on-resistance of 2.4mOhm at 30A and 5V, with a continuous drain current capability of 31A (Ta) at 25°C. Key specifications include a gate charge (Qg) of 18 nC at 5V and input capacitance (Ciss) of 1900 pF at 20V. The EPC2030 is designed for efficient switching applications, operating across a temperature range of -40°C to 150°C (TJ). Its surface mount die package is supplied on a Tape & Reel (TR). This component is widely utilized in high-frequency power conversion systems, including DC-DC converters, power management, and solid-state LiDAR.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 30A, 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 16mA |
| Supplier Device Package | Die |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 20 V |