EPC2029
GANFET N-CH 80V 48A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC eGaN® EPC2029 is an 80V, 48A N-Channel GaNFET presented as a die for surface mount applications. This component features a low Rds(on) of 3.2mOhm at 30A and 5V Vgs, with a gate charge (Qg) of 13 nC at 5V. Input capacitance (Ciss) is rated at 1410 pF at 40V. The device operates efficiently across a temperature range of -40°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of +6V and -4V. This GaNFET technology is suitable for demanding applications in power conversion, DC-DC converters, and motor drives. The EPC EPC2029 is supplied in Tape & Reel packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 30A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 12mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1410 pF @ 40 V |
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