EPC2025
GANFET N-CH 300V 4A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC's eGaN® series EPC2025 is a 300V N-Channel GaNFET designed for high-efficiency power conversion applications. This surface mount die offers a continuous drain current of 4A at 25°C with a maximum Rds(on) of 150mOhm at 3A, 5V. Featuring low input capacitance (Ciss) of 194 pF at 240V and a gate-source voltage (Vgs) range of +6V/-4V, this device is optimized for demanding switching performance. The EPC2025 operates across a temperature range of -40°C to 150°C (TJ) and is supplied in Tape & Reel packaging. This component is suitable for use in sectors such as automotive, industrial power, and consumer electronics where high power density and efficiency are paramount.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 3A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 300 V |
| Input Capacitance (Ciss) (Max) @ Vds | 194 pF @ 240 V |
Request a Quote
Clients Also Buy
EPC2203
GANFET N-CH 80V 1.7A DIE
EPC2051
GANFET N-CH 100V 1.7A DIE
EPC2038
GANFET N-CH 100V 500MA DIE
