EPC2024
GANFET NCH 40V 60A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC eGaN® EPC2024 is a highly efficient N-Channel GaNFET designed for demanding power conversion applications. Featuring a 40V Drain-Source Voltage (Vdss) rating and capable of 90A continuous drain current (Id) at 25°C, this device offers exceptionally low on-resistance (Rds On) of 1.5mOhm at 37A and 5V Vgs. The EPC EPC2024 utilizes advanced Gallium Nitride technology, enabling superior switching performance and reduced power loss compared to traditional silicon MOSFETs. Its minimal input capacitance (Ciss) of 2100 pF at 20V Vds further contributes to high-frequency operation. Packaged as a bare die for advanced thermal management and integration, this component is ideal for applications in automotive, data center power, and advanced industrial power supplies. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 37A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 19mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 20 V |
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