EPC2023
GANFET N-CH 30V 60A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC EPC2023 is an N-Channel GaNFET die from the eGaN® series, offering a 30V drain-source voltage and 60A continuous drain current at 25°C. This component features a low on-resistance of 1.3mOhm maximum at 40A and 5V Vgs. With a gate threshold voltage of 2.5V maximum at 20mA and an input capacitance of 2300pF maximum at 15V Vds, the EPC2023 is designed for high-performance applications. Its surface mount die package, supplied on tape and reel, makes it suitable for demanding power management solutions across automotive, industrial, and consumer electronics sectors.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 40A, 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 20mA |
| Supplier Device Package | Die |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 15 V |
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