EPC2022
GANFET N-CH 100V 90A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC eGaN® EPC2022 is a 100 V, N-Channel GaNFET presented in a die format. It offers a continuous drain current of 90A (Ta) at 25°C, with a low on-resistance of 3.2 mOhm maximum at 25A and 5V Vgs. Key parameters include an input capacitance (Ciss) of 1500 pF at 50 V, a gate-source threshold voltage (Vgs(th)) of 2.5V at 12mA, and a maximum gate-source voltage (Vgs) of +6V/-4V. This component is suitable for demanding applications in power conversion, automotive, and industrial sectors. The EPC EPC2022 is supplied on Tape & Reel (TR).
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 12mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 50 V |
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