EPC2021ENGR
TRANS GAN 80V 60A BUMPED DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC eGaN® EPC2021ENGR is an 80V N-Channel power transistor in a die package, designed for high-performance applications. It features a low on-resistance of 2.5mOhm at 29A and 5V drive voltage, with a continuous drain current capability of 60A. The device exhibits a gate charge of 15 nC and input capacitance of 1700 pF at 40V. Operating across a temperature range of -40°C to 150°C, this Gallium Nitride (GaN) based FET is suitable for demanding power conversion tasks in areas such as DC-DC converters, point-of-load converters, and motor drives. The EPC EPC2021ENGR is supplied in cut tape packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 29A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 14mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 40 V |
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