EPC2020
GANFET N-CH 60V 90A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
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EPC's eGaN® EPC2020 is an N-Channel GaNFET designed for high-performance applications. This device features a 60V drain-source voltage rating and a continuous drain current capability of 90A at 25°C. The EPC2020 offers a low on-resistance of 2.2mOhm at 31A and 5V gate drive voltage, with a gate charge of 16 nC at 5V. Its input capacitance (Ciss) is 1780 pF at 30V. The component utilizes Gallium Nitride technology and is provided as a die. It supports a maximum gate-source voltage of +6V and -4V, with a threshold voltage of 2.5V at 16mA. This device is suitable for various power conversion applications in sectors such as automotive, data centers, and industrial power supplies. The EPC2020 is supplied in Tape & Reel packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 31A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 16mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 30 V |
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