EPC2018
GANFET N-CH 150V 12A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC eGaN® series EPC2018 is an N-Channel GaNFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) capability of 12A at 25°C. Its low on-resistance (Rds On) is specified at 25mOhm at 6A, 5V gate drive. Key parameters include a gate charge (Qg) of 7.5 nC maximum at 5V and an input capacitance (Ciss) of 540 pF maximum at 100V. The EPC2018 operates within a temperature range of -40°C to 125°C (TJ) and supports a maximum gate-to-source voltage (Vgs) of +6V and -5V. This bare die component is supplied in Tape & Reel packaging. It is utilized in power conversion applications across various industries including automotive, industrial, and consumer electronics.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -5V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 100 V |
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