EPC2016C
GANFET N-CH 100V 18A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC's eGaN® series EPC2016C is a 100V N-Channel GaNFET in a Die package for surface mount applications. This component offers a continuous drain current of 18A (Ta) with a maximum on-resistance of 16mOhm at 11A and 5V drive. Key parameters include a gate charge (Qg) of 4.5 nC at 5V and input capacitance (Ciss) of 420 pF at 50V. It operates across a temperature range of -40°C to 150°C (TJ) with a maximum gate-source voltage of +6V and -4V. The EPC2016C is suitable for power conversion systems in sectors such as automotive, industrial, and consumer electronics.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 11A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 50 V |
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