EPC2016
GANFET N-CH 100V 11A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC eGaN® EPC2016 is a 100V N-Channel GaNFET presented in a die package suitable for surface mount applications. This component offers a continuous drain current of 11A (Ta) at 25°C and a low on-resistance of 16mOhm at 11A, 5V. Key parameters include a gate charge (Qg) of 5.2 nC @ 5 V and input capacitance (Ciss) of 520 pF @ 50 V, enabling efficient switching performance. The device operates across a temperature range of -40°C to 125°C (TJ) and supports gate drive voltages from 5V. This GaNFET is commonly utilized in power conversion applications across automotive, industrial, and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 11A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -5V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 50 V |
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