EPC2015C
GANFET N-CH 40V 53A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC eGaN® EPC2015C is a 40V N-Channel GaNFET presented as a die. It offers a continuous drain current of 53A at 25°C (Ta) and a maximum Rds(on) of 4mOhm at 33A and 5V drive voltage. Key parameters include a gate charge (Qg) of 8.7 nC maximum at 5V and input capacitance (Ciss) of 1180 pF maximum at 20V. The device operates across a temperature range of -40°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of +6V and -4V. This component is suitable for applications requiring high efficiency and power density, including DC-DC converters, motor drives, and power management systems in sectors such as automotive, industrial, and consumer electronics. The EPC EPC2015C is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Ta) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 33A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 20 V |
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