EPC2015
GANFET N-CH 40V 33A DIE OUTLINEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC's eGaN® series EPC2015 is a 40V N-Channel GaNFET device. This surface mount die offers a low on-resistance of 4mOhm at 33A and 5V Vgs. Key specifications include a continuous drain current of 33A (Ta) at 25°C, a gate charge (Qg) of 11.6 nC at 5V, and input capacitance (Ciss) of 1200 pF at 20V. The device operates across a temperature range of -40°C to 150°C (TJ) with a maximum gate-source voltage of +6V and -5V. It is supplied in a Die package and is available on Tape & Reel (TR). This component is suitable for applications in power conversion, data centers, and automotive sectors.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 33A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -5V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 20 V |
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