EPC2014
GANFET N-CH 40V 10A DIE OUTLINEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC eGaN® N-Channel GaNFET, part number EPC2014, is a 40V device packaged as a die. This component offers a continuous drain current of 10A (Ta) at 25°C with a maximum Rds On of 16mOhm at 5A, 5V. Key characteristics include a gate charge (Qg) of 2.8 nC @ 5V and input capacitance (Ciss) of 325 pF @ 20V. It supports gate drive voltages from 5V with a maximum of +6V and minimum of -5V, and a threshold voltage (Vgs(th)) of 2.5V @ 2mA. Designed for surface mounting, the EPC2014 operates across a temperature range of -40°C to 150°C (TJ). This GaNFET technology is prevalent in applications such as DC-DC converters, point-of-load converters, and high-frequency power management solutions. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 2mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -5V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 20 V |
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