EPC2012
GANFET N-CH 200V 3A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC's eGaN® series EPC2012 is an N-Channel GaNFET designed for high-performance power conversion applications. This surface mount die offers a 200 V breakdown voltage and a continuous drain current capability of 3 A at 25°C. Featuring a low on-resistance of 100 mOhm at 3 A and 5 Vgs, this device minimizes conduction losses. The EPC2012 boasts a gate charge (Qg) of 1.8 nC (max) and input capacitance (Ciss) of 145 pF (max) at 100 Vds, facilitating efficient switching. It operates across a temperature range of -40°C to 125°C (TJ) and is supplied in Tape & Reel packaging. This component is suitable for use in power supply units, DC-DC converters, and motor drive systems.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -5V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 145 pF @ 100 V |
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