EPC2010C
GANFET N-CH 200V 22A DIE OUTLINEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
EPC's eGaN® series EPC2010C is a 200V, N-Channel GaNFET designed for high-performance power conversion applications. This die-outline component offers a continuous drain current of 22A (Ta) and a maximum on-resistance (Rds On) of 25mOhm at 12A and 5V gate-source voltage. Key specifications include a gate charge (Qg) of 5.3 nC (Max) @ 5V and an input capacitance (Ciss) of 540 pF (Max) @ 100V. With a drive voltage range of 5V and a thermal operating temperature range of -40°C to 150°C (TJ), this surface mount device is suitable for demanding applications in power supplies, motor drives, and DC-DC converters. The EPC2010C is supplied in Tape & Reel packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 12A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 100 V |
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