EPC2010
GANFET N-CH 200V 12A DIEManufacturer: EPC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The EPC eGaN® series FET EPC2010 is a 200V, N-Channel GaNFET in a die package, available on Tape & Reel. It features a continuous drain current of 12A (Ta) at 25°C and a maximum Rds On of 25mOhm at 6A, 5V. Key parameters include a gate charge of 7.5 nC at 5V and an input capacitance of 540 pF at 100V. Designed for efficient power conversion, this component is suitable for applications in power supplies, DC-DC converters, and motor drives across various industrial sectors. The device operates within a temperature range of -40°C to 125°C (TJ).
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 100 V |
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