EPC2007C
GANFET N-CH 100V 6A DIE OUTLINEManufacturer: EPC
Categories: Single FETs, MOSFETs
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EPC eGaN® EPC2007C, an N-Channel GaNFET, offers a 100V drain-source voltage and a continuous drain current of 6A at 25°C. This device features a low on-resistance of 30mOhm maximum at 6A, 5V. Key parameters include a gate charge (Qg) of 2.2 nC maximum at 5V and an input capacitance (Ciss) of 220 pF maximum at 50V. The EPC2007C is designed for surface mounting and comes in a die outline, supplied on tape and reel. Its operating temperature range is -40°C to 150°C. This component is utilized in applications such as high-frequency power conversion and advanced power management solutions found in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1.2mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 50 V |
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