EPC2007
GANFET N-CH 100V 6A DIE OUTLINEManufacturer: EPC
Categories: Single FETs, MOSFETs
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The EPC eGaN® EPC2007 is a 100V N-Channel GaNFET designed for high-performance applications. This die-outline component offers a continuous drain current of 6A at 25°C, with a maximum Rds(on) of 30mOhm at 6A and 5V. Key parameters include a gate charge (Qg) of 2.8 nC at 5V and input capacitance (Ciss) of 205 pF at 50V. The device supports a gate-source voltage range of +6V and -5V, with a threshold voltage (Vgs(th)) of 2.5V at 1.2mA. Operating across a temperature range of -40°C to 125°C (TJ), it is supplied in Tape & Reel packaging. This component finds utility in power conversion, motor drive, and DC-DC converter applications.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1.2mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -5V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 205 pF @ 50 V |