EPC2001C
GANFET N-CH 100V 36A DIE OUTLINEManufacturer: EPC
Categories: Single FETs, MOSFETs
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EPC eGaN® EPC2001C is a 100V, N-Channel GaNFET designed for high-performance power conversion applications. Featuring a low on-resistance of 7mOhm at 25A and 5V Vgs, this device offers exceptional efficiency. The EPC2001C boasts a continuous drain current capability of 36A (Ta) and a gate charge of 9 nC at 5V. Its low input capacitance of 900 pF at 50V contributes to high switching frequencies. This component is packaged as a Die and supplied in Tape & Reel (TR). Operating across a temperature range of -40°C to 150°C (TJ), with a maximum gate-source voltage of +6V and -4V, and a threshold voltage of 2.5V at 5mA, it is suitable for demanding applications in sectors such as automotive, industrial power, and high-frequency power supplies.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 5mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 50 V |
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