EPC2001
GANFET N-CH 100V 25A DIE OUTLINEManufacturer: EPC
Categories: Single FETs, MOSFETs
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EPC's eGaN® EPC2001 is an N-Channel GaNFET technology device offering a Drain to Source breakdown voltage of 100 V. This surface mount die features a continuous drain current capability of 25A (Ta) with a low on-resistance of 7mOhm at 25A and 5V gate drive. Key parameters include a gate charge (Qg) of 10 nC at 5V and an input capacitance (Ciss) of 950 pF at 50V. The device supports a maximum gate-source voltage (Vgs) of +6V and -5V, with a threshold voltage (Vgs(th)) of 2.5V at 5mA. Operating across a temperature range of -40°C to 125°C (TJ), this component is suitable for high-frequency power conversion applications in sectors such as automotive, industrial power supplies, and data centers. The EPC2001 is supplied in Tape & Reel packaging.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 5mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -5V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 50 V |
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