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EPC2110ENGRT

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EPC2110ENGRT

GANFET 2N-CH 120V 3.4A DIE

Manufacturer: EPC

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The EPC eGaN® EPC2110ENGRT is a 2-channel, 120V gallium nitride field-effect transistor (GaNFET) array, specifically a dual common source configuration. This device features a continuous drain current capability of 3.4A at 25°C and a low Rds(on) of 60mOhm at 4A, 5V. Key electrical parameters include a gate charge (Qg) of 0.8nC maximum at 5V and an input capacitance (Ciss) of 80pF maximum at 60V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 700µA. Packaged as a bare die and supplied on tape and reel (TR), the EPC2110ENGRT is designed for surface mount applications. Its operating temperature range is from -40°C to 150°C (TJ). This component finds utility in power conversion applications across industries such as automotive, industrial, and data centers.

Additional Information

Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDie
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Common Source
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Power - Max-
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C3.4A
Input Capacitance (Ciss) (Max) @ Vds80pF @ 60V
Rds On (Max) @ Id, Vgs60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs0.8nC @ 5V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 700µA
Supplier Device PackageDie

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