EPC2110ENGRT
GANFET 2N-CH 120V 3.4A DIEManufacturer: EPC
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The EPC eGaN® EPC2110ENGRT is a 2-channel, 120V gallium nitride field-effect transistor (GaNFET) array, specifically a dual common source configuration. This device features a continuous drain current capability of 3.4A at 25°C and a low Rds(on) of 60mOhm at 4A, 5V. Key electrical parameters include a gate charge (Qg) of 0.8nC maximum at 5V and an input capacitance (Ciss) of 80pF maximum at 60V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 700µA. Packaged as a bare die and supplied on tape and reel (TR), the EPC2110ENGRT is designed for surface mount applications. Its operating temperature range is from -40°C to 150°C (TJ). This component finds utility in power conversion applications across industries such as automotive, industrial, and data centers.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Source |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA |
| Supplier Device Package | Die |
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