EPC2108
GANFET 3 N-CH 60V/100V 9BGAManufacturer: EPC
Categories: FET, MOSFET Arrays
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EPC's eGaN® EPC2108 is a 3-channel N-channel GaNFET device in a 9-VFBGA package. This surface mount component offers a Drain-to-Source voltage (Vdss) of 60V and 100V, with continuous drain currents (Id) of 1.7A and 500mA, respectively, at 25°C. The EPC2108 features a half-bridge configuration with a synchronous bootstrap, enabling efficient power conversion. On-resistance (Rds On) is specified at 190mOhm for the 1.7A channel and 3.3Ohm for the 500mA channel, both at 2.5A, 5V. Gate charge (Qg) is 0.22nC and 0.044nC, with input capacitance (Ciss) at 22pF and 7pF. The device operates across a junction temperature range of -40°C to 150°C. This GaNFET is suitable for applications in power management and high-frequency switching circuits.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-VFBGA |
| Mounting Type | Surface Mount |
| Configuration | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 60V, 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
| Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 30V, 7pF @ 30V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.22nC @ 5V, 0.044nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
| Supplier Device Package | 9-BGA (1.35x1.35) |
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