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EPC2108

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EPC2108

GANFET 3 N-CH 60V/100V 9BGA

Manufacturer: EPC

Categories: FET, MOSFET Arrays

Quality Control: Learn More

EPC's eGaN® EPC2108 is a 3-channel N-channel GaNFET device in a 9-VFBGA package. This surface mount component offers a Drain-to-Source voltage (Vdss) of 60V and 100V, with continuous drain currents (Id) of 1.7A and 500mA, respectively, at 25°C. The EPC2108 features a half-bridge configuration with a synchronous bootstrap, enabling efficient power conversion. On-resistance (Rds On) is specified at 190mOhm for the 1.7A channel and 3.3Ohm for the 500mA channel, both at 2.5A, 5V. Gate charge (Qg) is 0.22nC and 0.044nC, with input capacitance (Ciss) at 22pF and 7pF. The device operates across a junction temperature range of -40°C to 150°C. This GaNFET is suitable for applications in power management and high-frequency switching circuits.

Additional Information

Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case9-VFBGA
Mounting TypeSurface Mount
Configuration3 N-Channel (Half Bridge + Synchronous Bootstrap)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Power - Max-
Drain to Source Voltage (Vdss)60V, 100V
Current - Continuous Drain (Id) @ 25°C1.7A, 500mA
Input Capacitance (Ciss) (Max) @ Vds22pF @ 30V, 7pF @ 30V
Rds On (Max) @ Id, Vgs190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Gate Charge (Qg) (Max) @ Vgs0.22nC @ 5V, 0.044nC @ 5V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package9-BGA (1.35x1.35)

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