EPC2107
GANFET 3 N-CH 100V 9BGAManufacturer: EPC
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Mosfet Array 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-VFBGA |
| Mounting Type | Surface Mount |
| Configuration | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
| Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 50V, 7pF @ 50V |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
| Supplier Device Package | 9-BGA (1.35x1.35) |
Request a Quote
Clients Also Buy
EPC2203
GANFET N-CH 80V 1.7A DIE
EPC2051
GANFET N-CH 100V 1.7A DIE
EPC2038
GANFET N-CH 100V 500MA DIE
