EPC2105ENGRT
GANFET 2N-CH 80V 9.5A DIEManufacturer: EPC
Categories: FET, MOSFET Arrays
Quality Control: Learn More
EPC's eGaN® EPC2105ENGRT is an 80V, 2 N-channel GaNFET array designed for high-performance power conversion applications. This surface mount die offers a continuous drain current capability of 9.5A at 25°C with a low Rds(on) of 14.5mOhm at 20A and 5V. The device features a gate charge (Qg) of 2.5nC at 5V and an input capacitance (Ciss) of 300pF at 40V, enabling efficient switching. Operating across a temperature range of -40°C to 150°C, the EPC2105ENGRT is suitable for use in sectors such as automotive, industrial power supplies, and consumer electronics. The component is supplied in a Die package, presented on Tape & Reel (TR).
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 40V |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 20A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 2.5mA |
| Supplier Device Package | Die |
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