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EPC2105ENGRT

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EPC2105ENGRT

GANFET 2N-CH 80V 9.5A DIE

Manufacturer: EPC

Categories: FET, MOSFET Arrays

Quality Control: Learn More

EPC's eGaN® EPC2105ENGRT is an 80V, 2 N-channel GaNFET array designed for high-performance power conversion applications. This surface mount die offers a continuous drain current capability of 9.5A at 25°C with a low Rds(on) of 14.5mOhm at 20A and 5V. The device features a gate charge (Qg) of 2.5nC at 5V and an input capacitance (Ciss) of 300pF at 40V, enabling efficient switching. Operating across a temperature range of -40°C to 150°C, the EPC2105ENGRT is suitable for use in sectors such as automotive, industrial power supplies, and consumer electronics. The component is supplied in a Die package, presented on Tape & Reel (TR).

Additional Information

Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDie
Mounting TypeSurface Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Power - Max-
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C9.5A
Input Capacitance (Ciss) (Max) @ Vds300pF @ 40V
Rds On (Max) @ Id, Vgs14.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 2.5mA
Supplier Device PackageDie

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