EPC2105
GANFET 2N-CH 80V 9.5A/38A DIEManufacturer: EPC
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Mosfet Array 80V 9.5A, 38A Surface Mount Die
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 40V, 1100pF @ 40V |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 5V, 10nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 2.5mA, 2.5V @ 10mA |
| Supplier Device Package | Die |
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