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EPC2104ENGRT

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EPC2104ENGRT

GANFET 2N-CH 100V 23A DIE

Manufacturer: EPC

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The EPC eGaN® EPC2104ENGRT is a 100V, 23A GaNFET device in a Die package, supplied on Tape & Reel. This 2 N-Channel configuration offers a low Rds(on) of 6.3mOhm at 20A and 5V Vgs, with a gate charge of 7nC at 5V. Featuring an input capacitance of 800pF at 50V, this component is designed for efficient power conversion. It operates across a temperature range of -40°C to 150°C (TJ). The EPC eGaN® EPC2104ENGRT is suitable for applications in power supply, motor drive, and renewable energy sectors.

Additional Information

Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDie
Mounting TypeSurface Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Power - Max-
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C23A
Input Capacitance (Ciss) (Max) @ Vds800pF @ 50V
Rds On (Max) @ Id, Vgs6.3mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs7nC @ 5V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 5.5mA
Supplier Device PackageDie

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