EPC2104ENGRT
GANFET 2N-CH 100V 23A DIEManufacturer: EPC
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The EPC eGaN® EPC2104ENGRT is a 100V, 23A GaNFET device in a Die package, supplied on Tape & Reel. This 2 N-Channel configuration offers a low Rds(on) of 6.3mOhm at 20A and 5V Vgs, with a gate charge of 7nC at 5V. Featuring an input capacitance of 800pF at 50V, this component is designed for efficient power conversion. It operates across a temperature range of -40°C to 150°C (TJ). The EPC eGaN® EPC2104ENGRT is suitable for applications in power supply, motor drive, and renewable energy sectors.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 23A |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 50V |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 20A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 5.5mA |
| Supplier Device Package | Die |
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