EPC2103ENGRT
GANFET 2N-CH 80V 23A DIEManufacturer: EPC
Categories: FET, MOSFET Arrays
Quality Control: Learn More
EPC eGaN® FET, MOSFET Array, part number EPC2103ENGRT, offers an 80V drain-source voltage and 23A continuous drain current. This GaNFET component utilizes a 2 N-Channel configuration, essentially a half-bridge, in a surface mount die package, supplied on tape and reel. Key electrical specifications include a low on-resistance of 5.5mOhm at 20A and 5V, and a gate charge of 6.5nC at 5V. Input capacitance is specified at 7600pF at 40V. The EPC2103ENGRT is suitable for applications in power conversion, including DC-DC converters, motor drives, and Class D audio amplifiers, where high efficiency and compact form factors are critical.
Additional Information
Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 23A |
| Input Capacitance (Ciss) (Max) @ Vds | 7600pF @ 40V |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Supplier Device Package | Die |
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