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EPC2103ENGRT

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EPC2103ENGRT

GANFET 2N-CH 80V 23A DIE

Manufacturer: EPC

Categories: FET, MOSFET Arrays

Quality Control: Learn More

EPC eGaN® FET, MOSFET Array, part number EPC2103ENGRT, offers an 80V drain-source voltage and 23A continuous drain current. This GaNFET component utilizes a 2 N-Channel configuration, essentially a half-bridge, in a surface mount die package, supplied on tape and reel. Key electrical specifications include a low on-resistance of 5.5mOhm at 20A and 5V, and a gate charge of 6.5nC at 5V. Input capacitance is specified at 7600pF at 40V. The EPC2103ENGRT is suitable for applications in power conversion, including DC-DC converters, motor drives, and Class D audio amplifiers, where high efficiency and compact form factors are critical.

Additional Information

Series: eGaN®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDie
Mounting TypeSurface Mount
Configuration2 N-Channel (Half Bridge)
TechnologyGaNFET (Gallium Nitride)
Power - Max-
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C23A
Input Capacitance (Ciss) (Max) @ Vds7600pF @ 40V
Rds On (Max) @ Id, Vgs5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs6.5nC @ 5V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 7mA
Supplier Device PackageDie

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